Large Spin Hall Magnetoresistance And Its Correlation

03.06.2022
  1. Manipulation of spin Hall magnetoresistance and.
  2. Spin Hall magnetoresistance in paramagnetic NdGaO3.
  3. Anomalous Hall magnetoresistance in a ferromagnet.
  4. Spin-to-charge conversion and interface-induced spin Hall.
  5. Theory of spin Hall magnetoresistance (SMR) and... - Europe PMC.
  6. Negative spin Hall magnetoresistance of normal metal... - Nature.
  7. Giant magnetoresistance: history, development and beyond.
  8. ‪Byong Guk Park‬ - ‪Google Scholar‬.
  9. Large nonsaturating magnetoresistance and signature of... - PNAS.
  10. SPIN ORBIT TORQUE | Spintronics Device Lab | 서울특별시.
  11. Large spin Hall magnetoresistance and its correlation to.
  12. Correlation between the spin Hall angle and the structural.
  13. Sign reversal of magnetoresistance and inverse spin Hall effect in.
  14. Giant facet-dependent spin-orbit torque and spin Hall conductivity in.

Manipulation of spin Hall magnetoresistance and.

(a) High resolution TEM image of the Pt/MnPSe3 bilayer cross-section, revealing a ~2-nm-thick granular layer interposing between the Van der Waals compound and the Pt film. The inset shows the.

Spin Hall magnetoresistance in paramagnetic NdGaO3.

In order to substantially reduce the anisotropic magnetoresistance (AMR), planar Hall effect (PHE), anomalous Hall effect (AHE), and other spurious effects in the p-ISHE measurements , especially for organic-based samples with a very weak spin-orbit coupling, we integrated a microwave shunt capacitor layer (SiO 2) into the device geometry.

Anomalous Hall magnetoresistance in a ferromagnet.

We present a theory of the spin Hall magnetoresistance (SMR) in multilayers made from an insulating ferromagnet F, such as yttrium iron garnet (YIG), and a normal metal N with spin-orbit… 459 PDF Spin Transport at Interfaces with Spin-orbit Coupling: Formalism V. Amin, M. Stiles Physics 2016.

Spin-to-charge conversion and interface-induced spin Hall.

Physical origin of the AMR: spin-orbit interaction effect: λL.S ⇒⇒⇒⇒It is expected to be large only in systems with large spin-orbit interaction and anisotropic charge distribution 1) It was shown in magnetoresistance measurements of rare-earth-doped gold that the AMR was large in all cases except for Gd, with L=0 (Gd +3 ⇒4f 7). The influence of epitaxial strain on the electronic, magnetic, and optical properties of the distorted double perovskite Ca2FeOsO6 is studied. These calculations show that the com.

Theory of spin Hall magnetoresistance (SMR) and... - Europe PMC.

Here we report that the spin Hall magnetoresistance of Ta/NiFe bilayers is negative, necessitating an additional interconversion process. Our theory shows that the interconversion owing to. Large spin Hall magnetoresistance and its correlation to the spin-orbit torque in W/CoFeB/MgO structures. The report of a systematic study of the magnetoresistance of W/CoFeB/MgO structures and its correlation with the current-induced torque to the magnetization demonstrates that MR in a non-magnet/ferromagnet structure can be utilized to. The spin Hall angle and the spin diffusion length of W are 0.22 0.03 and 2.0 0.5 nm, respectively, which are extracted from the thickness dependence of SMR values. Moreover, we perform spin-orbit.

Negative spin Hall magnetoresistance of normal metal... - Nature.

We investigate the spin Hall magnetoresistance (SMR) at room temperature in thin-film heterostructures of antiferromagnetic insulating (0001)-oriented α − Fe 2 O 3 (hematite) and Pt. We measure their longitudinal and transverse resistivities while rotating an applied magnetic field of up to 17 T in three orthogonal planes. Second-harmonic resistance ( R2ω) as a function of the magnetic field angle for a 4-nm α-Sn film. The data in ( A) were measured with a Hall bar whose length is along [11ˉ2] of the α-Sn film, while those in ( B) were measured with a Hall bar with its length along [1ˉ10]. OPEN IN VIEWER. Here, we experimentally demonstrate that the spin accumulation, subsequent spin backflow, and spin-charge conversion can give rise to a different type of spin current-related spin current related magnetoresistance, dubbed here as the anomalous Hall magnetoresistance, which has the same angular dependence as the recently discovered spin Hall.

Giant magnetoresistance: history, development and beyond.

Large spin Hall magnetoresistance and its correlation to the spin-orbit torque in W/CoFeB/MgO structures. Cho S, Baek SC, Lee KD, Jo Y, Park BG. Sci Rep, 5:14668, 01 Oct 2015 Cited by: 9 articles | PMID: 26423608 | PMCID: PMC4589767. Free to read & use.

‪Byong Guk Park‬ - ‪Google Scholar‬.

We have studied the spin Hall magnetoresistance (SMR), the magnetoresistance within the plane transverse to the current flow, of Pt/Co bilayers. We find that the SMR increases with increasing Co thickness: the effective spin Hall angle for bilayers with thick Co exceeds the reported values of Pt when a conventional drift-diffusion model is used. Spin Hall magnetoresistance and unidirectional spin Hall magnetoresistance. Fig. 2(b) and Fig. 2(c) represents the angular dependence of the R ω and R 2 ω during the magnetization rotation in the xy-, yz- and xz-planes for the sample with t P t = 4.7 n m. The R ω curves show 180 ° period and typical SMR behavior: R y < R z ≈ R x. The.

Large nonsaturating magnetoresistance and signature of... - PNAS.

Large spin Hall magnetoresistance and its correlation to the spin-orbit torque in W/CoFeB/MgO structures S Cho, SC Baek, KD Lee, Y Jo, BG Park Scientific reports 5 1, 1-9 , 2015. Magnetoresistance, giant magnetoresistance, and colossal magnetoresistance. The materials and mechanisms for these four types ofmagnetoresistance are distinctly different. A prerequisite for large θ SH is significant spin-orbit coupling. Of potential interest are compounds such as Ir 1−x Mn x, which are antiferromagnetic for various ranges of x.These compounds are widely used in spintronic devices because of the exchange bias fields that they imprint on neighboring ferromagnetic layers that lead to a unidirectional magnetic anisotropy (). Large spin Hall magnetoresistance and its correlation to the spin-orbit torque in W/CoFeB/MgO structures journal, October 2015. Cho, Soonha; Baek, Seung-heon Chris; Lee, Kyeong-Dong;... Effect of 5 d Band Filling and Correlation with Spin Mixing Conductance journal, April 2018.

SPIN ORBIT TORQUE | Spintronics Device Lab | 서울특별시.

PDF | Unidirectional spin Hall magnetoresistance (USMR) has been widely reported in the heavy metal / ferromagnet (HM/FM) bilayer systems. We observe... | Find, read and cite all the research you. Along with extremely large and nonsaturating magnetoresistance (MR), ∼ 1.4 × 10 5 % at 2 K and 9 T, it shows strong anisotropy, depending on the direction of the magnetic field. Quantum oscillation and Hall effect measurements have revealed large hole and small electron Fermi pockets.

Large spin Hall magnetoresistance and its correlation to.

Therefore, the SSC is most important, and the three-spin correlation without SOC should dominate over the two-spin correlation with SOC. One another possibility for the large Hall response observed in MnGe films is the emergence of high-mobility carriers in the FM region, which can result in σ x y with a sharp peak structure, as typically. The spin-orbit interaction in heavy metal/ferromagnet/oxide structures has been extensively investigated because it can be employed in manipulation of the magnetization direction by in-plane current. This implies the existence of an inverse effect, in which the conductivity in such structures should depend on the magnetization orientation.

Correlation between the spin Hall angle and the structural.

In recent years, spin Hall magnetoresistance (SMR) has emerged as an efficient way to probe the spontaneous magnetization state in ordered magnetic systems, by electrical current.... (NM) such as Pt with large spin orbit coupling (SOC) [ ] [ ]... In NGO with L=6, a strong correlation between spin and orbital angular momentum is expected. Large GMR- or TMR-like effects have been theoret- 3.5 MR in nonmagnetic systems ically predicted [118,119], and a GMR up to ~300% has been reported by Suan et al. [120] in organic spin valves. Large MR can be found in non-magnetic materials, where Several review papers about recent progress in organic sample geometry and disorders have a. Large spin Hall magnetoresistance and its correlation to the spin-orbit torque in W/CoFeB/MgO structures Sci. Rep. , 5 ( 2015 ) , pp. 1 - 9 , 10.1038/srep14668 Google Scholar.

Sign reversal of magnetoresistance and inverse spin Hall effect in.

The magnetoresistance (MR) is the ratio of the electrical resistance of a material with and without an applied magnetic field [ 20 ]. In ferromagnetic conductors the MR is often dominated by effects that are not caused directly by the applied magnetic field, but rather by the magnetization orientation as controlled by the applied field.

Giant facet-dependent spin-orbit torque and spin Hall conductivity in.

For example Pt is known to have spin hall angle of 0.07 ~ 0.1 (7-10%). Ta is known to have spin hall angle of 0.12-0.15. It is important to find material with high spin hall angle for efficient magnetization switching [1] S. Cho, S.-h. C. Baek et al., 'Large spin Hall magnetoresistance and its correlation to the spin-orbit torque in W/CoFeb/MgO. One of the ways to access these properties in an ML in contact with an FM insulator is through its spin Hall magnetoresistance (SMR) [16, 22]. Another independent technique to probe the properties of the ML and the interface is the microwave driven spin-pumping SPE-ISHE. The spin Hall effect ( 1) allows electrical generation of spin current in materials with strong spin-orbit interaction (SOI) ( 2 ). The spin Hall angle, a material parameter that characterizes charge to spin conversion efficiency, scales with the longitudinal resistivity and the spin Hall conductivity ( 3 ).


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